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| VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 500V RDS(ON) (max) 13 ID(ON) (min) 0.5A Order Number / Package TO-92 VN2450N3 TO-243AA* VN2450N8 Die** VN2450NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels. ** Die in wafer form. Features Free from secondary breakdown Low input and output leakage Low CISS and fast switching speeds High input impedance and high gain Product marking for TO-243AA: VN4E Where = 2-week alpha date code Advanced DMOS Technology Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C D G D S TO-243AA (SOT-89) SGD TO-92 Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2450 Thermal Characteristics Package TO-243AA TO-92 ID (continuous)* 0.25A 0.2A ID (pulsed) 0.75A 0.65A Power Dissipation @ TC = 25C 1.6W 1W jc ja IDR* 0.25A 0.2A IDRM 0.75A 0.65A C/W 15 125 C/W 78 170 * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 500 1.5 -5.5 100 10 1 Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = 2.0mA VGS = VDS , ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 10V, VDS = 25V VGS = 4.5V, ID = 100mA VGS = 10V, ID = 400mA VGS = 10V, ID = 400mA VDS = 25V, ID = 200mA VGS = 0V, VDS = 25V f = 1.0 MHz ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop 0.5 20 13 1.7 50 150 50 25 10 10 25 20 1.5 A %/C m pF ns V Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD = 25V, ID = 250mA, RGEN = 25 VGS = 0V, ISD = 400mA RL OUTPUT D.U.T. VN2450 Typical Performance Curves Output Characteristics 1.2 VGS = 10V 8V 1.0 Saturation Characteristics 1.0 6V VGS = 10V 0.8 8V 6V 0.6 5V ID (Amperes) 0.8 0.6 5V ID (Amperes) 0.4 4V 0.4 4V 0.2 3V 0 10 20 30 40 50 0.2 0 0 0 2 4 6 8 10 3V VDS (Volts) Transconductance vs. Drain Current 0.5 VDS = 25V VDS (Volts) Power Dissipation vs. Case Temperature 2.0 1.6 0.4 GFS (siemens) PD (Watts) TA = -55C SOT-89 1.2 0.3 TA = 25C 0.2 0.8 TO-92 0.4 0.1 TA = 125C 0 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 TC (C) ID (Amperes) Maximum Rated Safe Operating Area 1.0 SOT-89 (pulsed) 1.0 Thermal Response Characteristics SOT-89 P D = 1.6W T C = 25C Thermal Resistance (normalized) TO-92 (pulsed) 0.8 ID (amperes) TO-92 0.1 SOT-89 0.6 0.4 0.01 0.2 T C = 25C 0.001 1 10 100 1000 0 0.001 0.01 0.1 TO-92 P D = 1W T C = 25C 1.0 10 VDS (Volts) tp (seconds) 3 VN2450 Typical Performance Curves BVDSS Variation with Temperature 1.2 30 On Resistance vs. Drain Current BVDSS (Normalized) 25 VGS = 4.5V RDS(ON) (ohms) 1.1 20 1.0 15 10 VGS = 10V 0.9 5 0.8 -50 0 0 50 100 150 0 0.3 0.6 0.9 1.2 1.5 TJ (C) Transfer Characteristics 1.2 VDS = 25V 1.0 TA = -55C 1.35 1.5 ID (Amperes) VGS(TH) and RDS(ON) w/ Temperature 3.0 RDS(on) @ 10V, 0.4A ID (Amperes) VGS(th) @ 1mA 1.2 2.0 0.8 TA = 25C 0.6 1.05 1.5 0.4 TA = 125C 0.2 0.9 1.0 0.75 0.5 0.0 0 1 2 3 4 5 6 0.6 -50 -25 0 25 50 75 100 125 0.0 150 VGS (Volts) Capacitance vs. Drain Source Voltage 300 f = 1MHz TJ (C) Gate Drive Dynamic Characteristics 10 ID = 0.5A 8 225 VDS=10V C (picofarads) VGS (volts) VDS=40V 6 150 CISS 4 75 COSS CRSS 2 0 0 10 20 30 40 0 0 1.0 2.0 3.0 4.0 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) 2.5 |
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